inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK808 description drain current C i d =1a@ t c =25 drain source voltage- : v dss =800v(min) fast switching speed applications designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. absolute maximum ratings(t a =25 ) symbol arameter value nit v dss drain-source voltage (v gs =0) 800 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 1 a p tot total dissipation@tc=25 45 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK808 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 800 v v gs( th ) gate threshold voltage v ds =25 v gs ; i d =1ma 1.0 5.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d = 0.7a 4.7 7.0 i gss gate source leakage current v gs = 20v;v ds = 0 1 ua i dss zero gate voltage drain current v ds =640v; v gs = 0 0.1 ma ton turn-on time v gs =10v;i d =0.7a; r l =285 35 ns toff turn-off time 110 ns pdf pdffactory pro www.fineprint.cn
|
